DIODES ZXMHC6A07N8TC

DIODES · FETs & Power MOSFETs · MPN ZXMHC6A07N8TC

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Specifications

ConfigurationFull-Bridge
Current - Continuous Drain(Id)1.39A;1.28A
RDS(on)250mΩ@10V
Pd - Power Dissipation-
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel + 2 P-Channel
Input Capacitance(Ciss)166pF
Gate Charge(Qg)3.2nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel+P-Channel Array 60V 1.39A 1.28A Surface Mount SO-8

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