DIODES · FETs & Power MOSFETs · MPN ZXMHC6A07N8
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| Configuration | Full-Bridge |
|---|---|
| Gate Charge(Qg) | 5.1nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 19.5pF |
| Current - Continuous Drain(Id) | 1.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.36W |
| Reverse Transfer Capacitance (Crss@Vds) | 10.8pF |
| RDS(on) | 350mΩ@4.5V |
| Number | 2 N-Channel + 2 P-Channel |
| Input Capacitance(Ciss) | 166pF |
60V 1.8A 3V 1.36W 350mΩ@4.5V 2 N-Channel + 2 P-Channel N-Channel + P-Channel SOIC-8 Single FETs, MOSFETs RoHS