DIODES ZXMHC3A01N8TC

DIODES · FETs & Power MOSFETs · MPN ZXMHC3A01N8TC

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Specifications

ConfigurationFull-Bridge
Current - Continuous Drain(Id)2.7A
RDS(on)125mΩ@10V
Pd - Power Dissipation1.36W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel + 2 P-Channel
Input Capacitance(Ciss)190pF
Gate Charge(Qg)3.9nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel+P-Channel Array 30V 2.7A 1.36W Surface Mount SO-8

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