DIODES ZXMHC10A07T8TA

DIODES · FETs & Power MOSFETs · MPN ZXMHC10A07T8TA

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Specifications

ConfigurationFull-Bridge
Current - Continuous Drain(Id)1.4A
RDS(on)1.45Ω@6V
Pd - Power Dissipation1.3W
Gate Threshold Voltage (Vgs(th))4V
Drain to Source Voltage100V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)10.8pF
Input Capacitance(Ciss)141pF
Gate Charge(Qg)3.5nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)13.1pF

Technical details

N-Channel+P-Channel Array 100V 1.4A 1.3W Surface Mount SOT-223-8

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