DIODES · FETs & Power MOSFETs · MPN ZXMHC10A07N8TC
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| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 1A |
| RDS(on) | 1.45Ω@6V |
| Pd - Power Dissipation | 1.36W |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 100V |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF;10.8pF |
| Number | 2 N-Channel + 2 P-Channel |
| Input Capacitance(Ciss) | 138pF;141pF |
| Gate Charge(Qg) | 2.9nC@10V;3.5nC@10V |
| Operating Temperature | -55℃~+150℃ |
N-Channel+P-Channel Array 100V 1A 1.36W Surface Mount SO-8