DIODES · FETs & Power MOSFETs · MPN ZXMC6A09DN8TA
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| Current - Continuous Drain(Id) | 5.1A |
|---|---|
| RDS(on) | 45mΩ@10V |
| Pd - Power Dissipation | 2.1W |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 60V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 59pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.407nF |
| Gate Charge(Qg) | 24.2nC@10V |
| Operating Temperature | -55℃~+150℃ |
N-Channel+P-Channel Array 60V 5.1A 2.1W Surface Mount SO-8