DIODES ZXMC4559DN8TA

DIODES · FETs & Power MOSFETs · MPN ZXMC4559DN8TA

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Specifications

Current - Continuous Drain(Id)4.7A
Pd - Power Dissipation2.1W
RDS(on)105mΩ@10V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage60V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)64pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.063nF
Gate Charge(Qg)24.2nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)104pF

Technical details

N-Channel+P-Channel Array 60V 4.7A 2.1W Surface Mount SO-8

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