DIODES ZXMC3AMCTA

DIODES · FETs & Power MOSFETs · MPN ZXMC3AMCTA

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Specifications

Configuration-
Current - Continuous Drain(Id)3.7A;2.7A
RDS(on)330mΩ@4.5V
Pd - Power Dissipation19.6W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)20pF;49.2pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)190pF;206pF
Gate Charge(Qg)2.3nC@4.5V;3.8nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

330mΩ@4.5V 19.6W 3V 1 N-Channel + 1 P-Channel DFN-8-EP(3x2) FET, MOSFET Arrays RoHS

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