DIODES · FETs & Power MOSFETs · MPN ZXMC3A16DN8QTA
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| Current - Continuous Drain(Id) | 6.4A |
|---|---|
| RDS(on) | 35mΩ@10V;48mΩ@10V |
| Pd - Power Dissipation | 2.1W |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 30V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 116pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 970pF |
| Gate Charge(Qg) | 24.9nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 166pF |
6.4A 2.1W 1V 1 N-Channel + 1 P-Channel SO-8 FET, MOSFET Arrays RoHS