DIODES ZXMC3A16DN8QTA

DIODES · FETs & Power MOSFETs · MPN ZXMC3A16DN8QTA

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Specifications

Current - Continuous Drain(Id)6.4A
RDS(on)35mΩ@10V;48mΩ@10V
Pd - Power Dissipation2.1W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)116pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)970pF
Gate Charge(Qg)24.9nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)166pF

Technical details

6.4A 2.1W 1V 1 N-Channel + 1 P-Channel SO-8 FET, MOSFET Arrays RoHS

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