DIODES · FETs & Power MOSFETs · MPN ZXMC10A816N8TC
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| Current - Continuous Drain(Id) | 2.1A;2.2A |
|---|---|
| RDS(on) | 230mΩ@10V;235mΩ@10V |
| Pd - Power Dissipation | 2.4W;2.6W |
| Gate Threshold Voltage (Vgs(th)) | 1.7V;3V |
| Drain to Source Voltage | 100V;100V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF;46pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 497pF;717pF |
| Gate Charge(Qg) | 9.2nC@10V;16.5nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 29pF;55pF |
N-Channel+P-Channel 100V 2.2A 2.6W Surface Mount SO-8