DIODES · FETs & Power MOSFETs · MPN ZXMC10A816N8TA
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 9.2nC@10V;16.5nC@10V |
| Output Capacitance(Coss) | 29pF;55pF |
| Current - Continuous Drain(Id) | 2.1A;2.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V;2V |
| Pd - Power Dissipation | 2.1W;2.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF;46pF |
| RDS(on) | 170mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 497pF;717pF |
| Type | N-Channel + P-Channel |
100V 170mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SO-8 Single FETs, MOSFETs RoHS