DIODES ZXM62P03E6TA

DIODES · FETs & Power MOSFETs · MPN ZXM62P03E6TA

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Specifications

Gate Charge(Qg)10.2nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation625mW
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)150mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)330pF

Technical details

P-Channel 30V 1.5A 625mW Surface Mount SOT-26

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