DIODES ZXM62P02E6TA

DIODES · FETs & Power MOSFETs · MPN ZXM62P02E6TA

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Specifications

Gate Charge(Qg)5.8nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)200mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)320pF
TypeP-Channel

Technical details

P-Channel 20V 2.3A 1.7W Surface Mount SOT-26

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