DIODES ZXM61P03FTA

DIODES · FETs & Power MOSFETs · MPN ZXM61P03FTA

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)45pF
Current - Continuous Drain(Id)1.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation806mW
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)550mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)140pF
TypeP-Channel

Technical details

P-Channel 30V 1.1A 0.806W Surface Mount SOT-23

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