DIODES ZXM61P03F

DIODES · FETs & Power MOSFETs · MPN ZXM61P03F

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Specifications

Gate Charge(Qg)4.8nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)1.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation625mW
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)350mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)140pF

Technical details

30V 1.1A 625mW Surface Mount SOT-23

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