DIODES ZXM61P02F

DIODES · FETs & Power MOSFETs · MPN ZXM61P02F

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Specifications

Gate Charge(Qg)3.5nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)900mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation625mW
RDS(on)600mΩ@4.5V;900mΩ@2.7V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number1 P-Channel
Input Capacitance(Ciss)150pF

Technical details

P-Channel 20V 625mW Surface Mount SOT-23

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