DIODES ZX5T851GTA

DIODES · Transistors (BJTs) · MPN ZX5T851GTA

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)130MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain40
Pd - Power Dissipation1.6W
Number1 NPN
typeNPN
Current - Collector(Ic)6A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))50mV

Technical details

Bipolar (BJT) Transistor NPN 60V 6A 130MHz 1.6W Surface Mount SOT-223

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