DIODES ZVP3310A

DIODES · FETs & Power MOSFETs · MPN ZVP3310A

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Current - Continuous Drain(Id)140mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation625mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)20Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)50pF

Technical details

P-Channel 100V 140mA 625mW Through Hole TO-92-3

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