DIODES ZVN4525E6TA

DIODES · FETs & Power MOSFETs · MPN ZVN4525E6TA

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Specifications

Gate Charge(Qg)2.6nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)11pF
Current - Continuous Drain(Id)230mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation1.1W
Reverse Transfer Capacitance (Crss@Vds)3.6pF
RDS(on)5.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)72pF
TypeN-Channel

Technical details

N-Channel 250V 230mA 1.1W Surface Mount SOT-26

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