DIODES ZVN4310A

DIODES · FETs & Power MOSFETs · MPN ZVN4310A

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)900mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation850mW
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)500mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)350pF
TypeN-Channel

Technical details

100V 900mA 3V 850mW 500mΩ@10V 1 N-channel N-Channel TO-92-3 Single FETs, MOSFETs RoHS

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