DIODES ZVN4306AV

DIODES · FETs & Power MOSFETs · MPN ZVN4306AV

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Specifications

Drain to Source Voltage60V
Current - Continuous Drain(Id)1.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation850mW
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)330mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)350pF

Technical details

N-Channel 60V 1.1A 850mW Through Hole TO-92-3

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