DIODES ZVN3310FTA

DIODES · FETs & Power MOSFETs · MPN ZVN3310FTA

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)100mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation330mW
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)10Ω@10V
Number1 N-channel
Input Capacitance(Ciss)40pF
TypeN-Channel

Technical details

N-Channel 100V 100mA 330mW Surface Mount SOT-23

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