DIODES ZTX949

DIODES · Transistors (BJTs) · MPN ZTX949

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation1.58W
typePNP
Number1 PNP
Current - Collector(Ic)4.5A
Operating Temperature-55℃~+200℃
Vce Saturation(VCE(sat))320mV

Technical details

Bipolar (BJT) Transistor PNP 30V 4.5A 100MHz 1.58W Through Hole TO-92

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