DIODES ZTX857

DIODES · Transistors (BJTs) · MPN ZTX857

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation1.2W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+200℃
Vce Saturation(VCE(sat))50mV

Technical details

Bipolar (BJT) Transistor NPN 300V 3A 80MHz 1.2W Through Hole TO-92

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