DIODES · Transistors (BJTs) · MPN ZTX855
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| Current - Collector Cutoff | 50nA |
|---|---|
| Transition frequency(fT) | 90MHz |
| Collector - Emitter Voltage VCEO | 150V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 100 |
| Pd - Power Dissipation | 1.2W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 4A |
| Vce Saturation(VCE(sat)) | 60mV |
| Operating Temperature | -55℃~+200℃ |
Bipolar (BJT) Transistor NPN 150V 4A 90MHz 1.2W Through Hole TO-92