DIODES ZTX757

DIODES · Transistors (BJTs) · MPN ZTX757

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO300V
DC Current Gain50
Pd - Power Dissipation1W
typePNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+200℃

Technical details

300V 50 PNP 500mA E-Line Single Bipolar Transistors RoHS

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