DIODES ZTX696B

DIODES · Transistors (BJTs) · MPN ZTX696B

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)70MHz
Collector - Emitter Voltage VCEO180V
Emitter-Base Voltage VEBO5V
DC Current Gain150
Pd - Power Dissipation1.5W
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+200℃
Vce Saturation(VCE(sat))250mV

Technical details

180V 150 1 NPN NPN 500mA TO-92-3 Single Bipolar Transistors RoHS

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