DIODES ZTX651QSTZ

DIODES · Transistors (BJTs) · MPN ZTX651QSTZ

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation1.5W
typeNPN
Current - Collector(Ic)2A
Operating Temperature-55℃~+200℃
Vce Saturation(VCE(sat))300mV

Technical details

60V NPN 2A Single Bipolar Transistors RoHS

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