DIODES ZTX614QSTZ

DIODES · Transistors (BJTs) · MPN ZTX614QSTZ

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO100V
DC Current Gain10000
Pd - Power Dissipation1W
typeNPN
Current - Collector(Ic)800mA
Operating Temperature-55℃~+200℃@(Tj)
Vce Saturation(VCE(sat))1.25V

Technical details

100V 10000 NPN 800mA Single Bipolar Transistors RoHS

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