DIODES ZTX601

DIODES · Transistors (BJTs) · MPN ZTX601

No reviews yet — be the first to review DIODES ZTX601.

Specifications

Vbe Saturation(VBE(sat))1.7V
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO10V
Pd - Power Dissipation1W
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+200℃

Technical details

160V NPN 1A TO-92 Single Bipolar Transistors RoHS

Related Transistors (BJTs)