DIODES ZTX558STZ

DIODES · Transistors (BJTs) · MPN ZTX558STZ

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+200℃
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor PNP 400V 200mA 50MHz 1W Through Hole TO-92

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