DIODES ZTX415

DIODES · Transistors (BJTs) · MPN ZTX415

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)40MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO6V
DC Current Gain25
Pd - Power Dissipation680mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 100V 500mA 40MHz 680mW Through Hole E-Line

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