DIODES ZHB6790TA

DIODES · Transistors (BJTs) · MPN ZHB6790TA

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Specifications

Current - Collector Cutoff100nA
DC Current Gain200
Collector - Emitter Voltage VCEO40V
Pd - Power Dissipation1.25W
Emitter-Base Voltage VEBO5V
Transition frequency(fT)150MHz
Vce Saturation(VCE(sat))750mV
typeNPN+PNP
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃

Technical details

200 40V 1.25W NPN+PNP 2A SOT-223-8 Bipolar Transistor Arrays RoHS

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