DIODES ZHB6718TA

DIODES · Transistors (BJTs) · MPN ZHB6718TA

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Specifications

Current - Collector Cutoff100nA
DC Current Gain200
Collector - Emitter Voltage VCEO20V
Pd - Power Dissipation2W
Emitter-Base Voltage VEBO7V
ConfigurationFull-Bridge
Transition frequency(fT)180MHz
Vce Saturation(VCE(sat))260mV
typeNPN+PNP
Number2 NPN + 2 PNP
Current - Collector(Ic)2.5A
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 20V 2.5A 180MHz 2W Surface Mount SOT-223-8

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