DIODES VN10LPSTZ

DIODES · FETs & Power MOSFETs · MPN VN10LPSTZ

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Specifications

Drain to Source Voltage60V
Current - Continuous Drain(Id)270mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation625mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)60pF

Technical details

60V 270mA 625mW 5Ω@10V 1 N-channel Single FETs, MOSFETs RoHS

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