DIODES VN10LP

DIODES · FETs & Power MOSFETs · MPN VN10LP

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)270mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation625mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)7.5Ω@5V
Number1 N-channel
Input Capacitance(Ciss)60pF
TypeN-Channel

Technical details

60V 270mA 625mW 7.5Ω@5V 1 N-channel N-Channel TO-92L-3 Single FETs, MOSFETs RoHS

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