DIODES · Transistors (BJTs) · MPN UMC4N-7
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| DC Current Gain | 68 |
|---|---|
| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 47kΩ |
| Resistor Ratio | 1 |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased (Base-Collector Junction) |
| Pd - Power Dissipation | 150mW |
| Voltage - Input(Max)(VI(off)) | 500mV |
| Input Voltage (VI(on)@Ic,Vce) | 3V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-353