DIODES · Transistors (BJTs) · MPN MMST6427-7-F
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| Vbe Saturation(VBE(sat)) | 2V |
|---|---|
| Current - Collector Cutoff | 1uA |
| Vbe On(VBE(on)) | 1.75V |
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 40V |
| Emitter-Base Voltage VEBO | 12V |
| DC Current Gain | 20000 |
| Pd - Power Dissipation | 200mW |
| type | NPN |
| Current - Collector(Ic) | 500mA |
| Vce Saturation(VCE(sat)) | - |
| Operating Temperature | -55℃~+150℃@(Tj) |
40V 20000 NPN 500mA SOT-323-3 Single Bipolar Transistors RoHS