DIODES MMST4126-7

DIODES · Transistors (BJTs) · MPN MMST4126-7

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO4V
Pd - Power Dissipation200mW
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))400mV

Technical details

25V 200mA Single Bipolar Transistors RoHS

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