DIODES · Transistors (BJTs) · MPN MMDT5551-7-F
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| Current - Collector Cutoff | 50nA |
|---|---|
| DC Current Gain | 80 |
| Pd - Power Dissipation | 200mW |
| Collector - Emitter Voltage VCEO | 160V |
| Emitter-Base Voltage VEBO | 6V |
| Transition frequency(fT) | 100MHz |
| Vce Saturation(VCE(sat)) | 150mV |
| type | NPN |
| Number | 2 NPN |
| Current - Collector(Ic) | 200mA |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor NPN 160V 200mA 100MHz 200mW Surface Mount SOT-363