DIODES MMDT4401-7-F

DIODES · Transistors (BJTs) · MPN MMDT4401-7-F

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Specifications

Current - Collector Cutoff100nA
DC Current Gain80
Collector - Emitter Voltage VCEO40V
Pd - Power Dissipation200mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)250MHz
Vce Saturation(VCE(sat))750mV
typeNPN
Number2 NPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 200mW Surface Mount SOT-363

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