DIODES MMBF170-7-F

DIODES · FETs & Power MOSFETs · MPN MMBF170-7-F

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Output Capacitance(Coss)11pF
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)2.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)22pF
Type-

Technical details

60V 200mA 300mW Surface Mount SOT-23

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