DIODES MJD350-13

DIODES · Transistors (BJTs) · MPN MJD350-13

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)10MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO7V
DC Current Gain30
Pd - Power Dissipation1.56W
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 300V 0.5A 10MHz 1.56W Surface Mount TO-252(DPAK)

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