DIODES · FETs & Power MOSFETs · MPN HTMN5130SSD-13
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| Gate Charge(Qg) | 8.9nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Current - Continuous Drain(Id) | 2.86A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.7W |
| RDS(on) | 200mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 218.7pF |
| Type | N-Channel |
55V 2.86A 3V 1.7W 200mΩ@4.5V 2 N-Channel N-Channel SO-8 Single FETs, MOSFETs RoHS