DIODES · Transistors (BJTs) · MPN HBDM60V600X-7
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| Vbe Saturation(VBE(sat)) | 0.95V |
|---|---|
| Current - Collector Cutoff | 10nA;100nA |
| Vbe On(VBE(on)) | 0.75V |
| Collector - Emitter Voltage VCEO | 60V;65V |
| DC Current Gain | 100;250 |
| Pd - Power Dissipation | 200mW |
| Emitter-Base Voltage VEBO | 5.5V;6V |
| Transition frequency(fT) | - |
| Vce Saturation(VCE(sat)) | 300mV;200mV |
| type | PNP;NPN |
| Current - Collector(Ic) | 600mA;500mA |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor NPN+PNP 65V 600mA 200mW Surface Mount SOT-363