DIODES · Transistors (BJTs) · MPN FZT855QTA
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| Current - Collector Cutoff | 50nA |
|---|---|
| Transition frequency(fT) | 90MHz |
| Collector - Emitter Voltage VCEO | 150V |
| DC Current Gain | 200 |
| Emitter-Base Voltage VEBO | 7V |
| Pd - Power Dissipation | 3W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 5A |
| Vce Saturation(VCE(sat)) | 20mV;35mV;60mV;250mV |
| Operating Temperature | -55℃~+150℃ |
150V 200 1 NPN NPN 5A SOT-223-3 Single Bipolar Transistors RoHS