DIODES FZT855QTA

DIODES · Transistors (BJTs) · MPN FZT855QTA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)90MHz
Collector - Emitter Voltage VCEO150V
DC Current Gain200
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation3W
Number1 NPN
typeNPN
Current - Collector(Ic)5A
Vce Saturation(VCE(sat))20mV;35mV;60mV;250mV
Operating Temperature-55℃~+150℃

Technical details

150V 200 1 NPN NPN 5A SOT-223-3 Single Bipolar Transistors RoHS

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