DIODES FZT853

DIODES · Transistors (BJTs) · MPN FZT853

No reviews yet — be the first to review DIODES FZT853.

Specifications

Current - Collector Cutoff10nA
Transition frequency(fT)130MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain100
Pd - Power Dissipation3W
Number1 NPN
typeNPN
Current - Collector(Ic)6A
Vce Saturation(VCE(sat))150mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 100V 6A 130MHz 3W Surface Mount SOT-223

Related Transistors (BJTs)