DIODES FZT755TA

DIODES · Transistors (BJTs) · MPN FZT755TA

No reviews yet — be the first to review DIODES FZT755TA.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO7V
DC Current Gain50
Pd - Power Dissipation3W
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

150V 50 1 PNP PNP 1A SOT-223-3 Single Bipolar Transistors RoHS

Related Transistors (BJTs)