DIODES FZT649TA

DIODES · Transistors (BJTs) · MPN FZT649TA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain70
Pd - Power Dissipation2W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))120mV

Technical details

Bipolar (BJT) Transistor NPN 25V 3A 150MHz 2W Surface Mount SOT-223

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