DIODES FMMT6517TA

DIODES · Transistors (BJTs) · MPN FMMT6517TA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO350V
Emitter-Base Voltage VEBO7V
DC Current Gain15
Pd - Power Dissipation350mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 350V 500mA 50MHz 350mW Surface Mount SOT-23

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